s mhop microelectronics c orp. a SDT02N02 product summary v dss i d r ds(on) ( ) typ 200v 2a 2.5 @ vgs=10v n-channel enhancement mode field effect transistor www.samhop.com.tw jun,07,2012 1 details are subject to change without notice. ver 1.0 green product symbol v ds v gs i dm a i d units parameter 200 2 13 v v 30 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a 42 w p d c 2.98 -55 to 175 c/w t a =25 c thermal characteristics maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja t a =25 c surface mount package. features s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. g d s g s sot-223
4 symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) 2 v g fs 1.8 s v sd c iss 240 pf c oss 38 pf c rss 8pf q g 14.5 nc 9 nc q gs 17 nc q gd 4.5 t d(on) ns t r 1.5 ns t d(off) 2 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =100v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =100v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =1a v ds =10v , i d =1a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 30v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 3.1 b f=1.0mhz b v ds =100v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 1.4 v notes SDT02N02 www.samhop.com.tw jun,07,2012 2 5.5 _ _ a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. ver 1.0 2.5 0.78 3
SDT02N02 www.samhop.com.tw jun,07,2012 3 figure 1. output characteristics v ds , drain-to-source voltage (v) i d , drain current(a) figure 2. transfer characteristics v gs , gate-to-source voltage (v) i d , drain current(a) i d , drain current (a) tj( c) tj, junction temperature ( c) vth, normalized gate-source threshold voltage tj, junction temperature ( c) figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) r ds(on) , on-resistance normalized drain current and temperature figure 4. on-resistance variation with and gate voltage figure 3. on-resistance vs. drain current ver 1.0 r ds(on) ( ) 0 2 4 6 8 10 12 2.8 2.1 1.4 0.7 0 3.5 v gs = 10v v gs = 6v 2.5 0 2.0 1.5 1.0 0.5 0 1.5 9 7.5 6 4.5 3 25 c tj=125 c -55 c 0.1 6 5 4 3 2 1 0 0.7 1.4 2.1 2.8 3.5 v gs = 10v 0 100 75 25 50 125 150 2.5 2.2 1.9 1.6 1.3 1.0 0.7 v gs =10v i d =1a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua v gs = 5v v gs = 7v
SDT02N02 www.samhop.com.tw jun,07,2012 4 gate-source voltage figure 7. on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to source voltage(v) v gs , gate to source voltage (v) figure 10. gate charge qg, total gate charge(nc) ver 1.0 r ds(on) ( ) figure 12. maximum safe i d , drain current (a) v ds , drain-source voltage (v) operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 6 5 4 3 2 1 0 24 68 10 0 i d =1a 125 c 75 c 25 c 125 c 75 c 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 25 c 600 500 400 300 200 100 0 010 20 30 40 50 ciss coss crss 10 8 6 4 2 0 012 3 45 6 7 8 v ds =100v i d =1a 110 100 1 10 100 300 vds=100v,id=1a vgs=10v td(on) tr td(off ) tf dc 1 0 s 1s 10 0 ms 1 0 m s 0.1 1 10 1 0.1 0.01 100 v gs =10v single pulse t a =25 c 10 r ds (on) l i m i t
ver1.0 www.samhop.com.tw jun,07,2012 5 SDT02N02 figure 13. normalized thermal transient impedance curve square wave pulse duration(sec) normalized transient thermal resistance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 100 1000 p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 10 0.01 0.02 0.05 0.1 0.2 0.5 single pulse
ver1.1 www.samhop.com.tw jun,07,2012 sot-223 e b g e e1 b 1 2 3 a b c c d b e1 0.10 m c b 0.10 m c b 0.10 m c b 0.080 c detail "a" c a2 a a1 detail "a" gauge plane seating plane c 0.25 l 1.50 1.60 0.76 2.84 6.70 4.60 0.81 6.30 bsc b1 b2 0.23 0.30 b 3.30 3.50 a1 2.30 a mom. min. 0.02 0.66 0.60 0.71 b3 2.90 3.00 g 2.95 7.00 0 min. min. dimensions millimeter 1.80 0.10 0.0008 1.70 0.0591 0.84 0.0260 0.79 0.0236 3.10 0.1142 3.05 0.1118 0.06 0.35 0.0090 bsc 7.30 0.2638 3.70 0.1300 0.0906 0.1811 0.0319 10 0 symbol c1 d c e1 l e1 e e 0.23 0.28 0.33 0.0090 a2 max. mom. dimensions inche 0.0709 0.0039 0.0630 0.0669 0.0300 0.0330 0.0280 0.0311 0.1181 0.1220 0.1161 0.1200 0.0020 0.1181 0.1378 0.2560 bsc 0.2760 0.2874 0.1378 0.1457 10 0.0110 0.0130 common bsc 6.50 6.70 0.2480 0.2638 c1 (c) b3 b2 section c-c c1 (c) b1 b section b-b 6 SDT02N02
SDT02N02 www.samhop.com.tw jun,07,2012 7 sot-223 tape and reel data sot-223 carrier tape sot-223 reel unit: @ package a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t unit: @ reel size ? 330 m n w w1 h k s g r v 2 0.5 10.6 2.0 2 0.5 ? 97.0 2 1.0 2.2 13.0 + 1.5 ? 13.0 + 0.5 - 0.2 8.0 2 0.1 6.83 2 0.1 1.88 2 0.1 7.42 2 0.1 1.50 + 0.25 1.60 + 0.1 12.0 + 0.3 - 0.1 1.75 2 0.1 5.50 2 0.5 4.00 2 0.1 2.00 2 0.05 p0 d0 d1 e e2 e1 p2 p1 k0 b0 a0 t 0.292 2 0.02 ver1.0
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